| PART |
Description |
Maker |
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| MT47H64M16HR-25ELH |
1Gb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| IS43DR81280A IS43DR16640A-3DBL 46DR16640A 46DR8128 |
1Gb (x8, x16) DDR2 SDRAM
Clock frequency up to 400MHz
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| HYS72T512122HFN-3.7-A HYS72T512022HFN-3.7-A |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM 512M X 72 DDR DRAM MODULE, PDMA240
|
Qimonda AG
|
| IS42S16160B IS42S16160B-6T IS42S16160B-7BL IS42S16 |
32MEG X 8, 16MEG X16 256-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
